Stacking faults in 4H–SiC epilayers and IGBTs
Article in Materials Science in Semiconductor Processing (July 2024)
The most recent citing publications are shown below. View all 22 publications that cite this research output on Dimensions.
Insight on defects mechanically introduced by nanoindentation in 4H-SiC p-n diode
Article in Materials & Design (March 2024)
Origins and characterization techniques of stress in SiC crystals: A review
Article in Progress in Crystal Growth and Characterization of Materials (February 2024)