1,092 followers
Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors. https://t.co/mkXTEPO9yZ from Johnny C. Ho, @CityUHongKong https://t.co/C7pU77hxuh
Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors. https://t.co/mkXTEPO9yZ from Johnny C. Ho, @CityUHongKong https://t.co/C7pU77hxuh