Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films

Overview of attention for article published in Discover Nano, February 2013

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Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Article in Advanced Electronic Materials (January 2024)

On origin of resistive and capacitive contributions to impedance of memory states in Cu/TiO2/Pt RRAM devices by impedance spectroscopy

Article in Ceramics International (January 2023)

Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr0.7Ca0.3MnO3/Al devices by employing a two-resistor model

Article in Physical Review Materials (September 2022)