Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy
Article in Journal of Luminescence (November 2022)
The most recent citing publications are shown below. View all 20 publications that cite this research output on Dimensions.
Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers
Article in Microelectronic Engineering (July 2022)
Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications
Article in Journal of Nanoelectronics and Optoelectronics (May 2022)