Temperature dependence on the contact size of GeSbTe films for phase change memories

Overview of attention for article published in Journal of Computational Electronics, January 2008

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Among the highest-scoring outputs from this source (#27 of 119)

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patent: 5 patents

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Summary Patents Dimensions citations

So far, Altmetric has seen 5 patents that reference this research output.

NVM synaptic element with gradual reset capability

Grant US-11087811-B1

United States of America

Capacitor with 3D NAND memory

Application US-10388720-B2

United States of America

3D capacitor with 3D memory

Grant US-9716137-B1

United States of America

Method and apparatus for healing phase change memory devices

Grant US-9620210-B2

United States of America

Method and apparatus for healing phase change memory devices

Grant US-9336878-B2

United States of America