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Stiffening layers for the relaxation of strained layers Application US-8912081-B2 United States of America 16 Dec 2014
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Strain relaxation using metal materials and related structures Application US-8637383-B2 United States of America 28 Jan 2014
Methods of forming relaxed layers of semiconductor materials, semiconductor structures… Application US-8486771-B2 United States of America 16 Jul 2013
Methods of forming layers of semiconductor material having reduced lattice strain… Application US-8278193-B2 United States of America 02 Oct 2012
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Application US-8173512-B2 United States of America 08 May 2012
Methods and structures for relaxation of strained layers Application US-8048693-B2 United States of America 01 Nov 2011
Methods for relaxation and transfer of strained layers and structures fabricated thereby Application US-7981767-B2 United States of America 19 Jul 2011