ZIRCONIUM TIN TITANATE COMPOSITIONS, CERAMIC BODIES COMPRISING SAME, AND METHODS OF… Application WO-2017058865-A1 World Intellectual Property Organisation (WIPO) 06 Apr 2017
Transistor with reduced depletion field width Grant US-8816447-B2 United States of America 26 Aug 2014
Transistor with reduced depletion field width Grant US-8362576-B2 United States of America 29 Jan 2013
Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics Grant US-8178413-B2 United States of America 15 May 2012
Systems with a gate dielectric having multiple lanthanide oxide layers Grant US-8093638-B2 United States of America 10 Jan 2012
Structures containing titanium silicon oxide Grant US-8076249-B2 United States of America 13 Dec 2011
Highly reliable amorphous high-K gate oxide ZrO2 Application US-8026161-B2 United States of America 27 Sep 2011
Methods of forming electronic devices containing Zr-Sn-Ti-O films Grant US-7923381-B2 United States of America 12 Apr 2011
Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics Grant US-7804144-B2 United States of America 28 Sep 2010
Atomic layer deposited titanium silicon oxide films Grant US-7687409-B2 United States of America 30 Mar 2010
NOR flash memory cell with high storage density Grant US-7476586-B2 United States of America 13 Jan 2009
Atomic layer deposited Zr-Sn-Ti-O films using TiI4 Grant US-7410917-B2 United States of America 12 Aug 2008
Write once read only memory employing floating gates Grant US-7369435-B2 United States of America 06 May 2008
NOR flash memory cell with high storage density Grant US-7348237-B2 United States of America 25 Mar 2008
Highly reliable amorphous high-k gate oxide ZrO2 Grant US-7259434-B2 United States of America 21 Aug 2007
Crystalline or amorphous medium-K gate oxides, Y203 and Gd203 Grant US-7208804-B2 United States of America 24 Apr 2007
Method including forming gate dielectrics having multiple lanthanide oxide layers Grant US-7205218-B2 United States of America 17 Apr 2007
Highly reliable amorphous high-k gate dielectric ZrOxNy Grant US-7205620-B2 United States of America 17 Apr 2007
Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently… Grant US-7199023-B2 United States of America 03 Apr 2007
Write once read only memory employing floating gates Grant US-7193893-B2 United States of America 20 Mar 2007
Atomic layer-deposited hafnium aluminum oxide Grant US-7135421-B2 United States of America 14 Nov 2006
Write once read only memory employing floating gates Grant US-7130220-B2 United States of America 31 Oct 2006
Nor flash memory cell with high storage density Grant US-7113429-B2 United States of America 26 Sep 2006
Atomic layer deposited lanthanide doped TiOx dielectric films Grant US-7084078-B2 United States of America 01 Aug 2006
NOR flash memory cell with high storage density Grant US-6996009-B2 United States of America 07 Feb 2006
Atomic layer deposited Zr-Sn-Ti-O films using TiI4 Grant US-6958302-B2 United States of America 25 Oct 2005
Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics Grant US-6953730-B2 United States of America 11 Oct 2005
Evaporation of Y-Si-O films for medium-K dielectrics Grant US-6930346-B2 United States of America 16 Aug 2005
Lanthanide doped TiOx dielectric films by plasma oxidation Grant US-6884739-B2 United States of America 26 Apr 2005
Methods, systems, and apparatus for uniform chemical-vapor depositions Grant US-6852167-B2 United States of America 08 Feb 2005
Evaporation of Y-Si-O films for medium-k dielectrics Grant US-6812100-B2 United States of America 02 Nov 2004
Highly reliable amorphous high-k gate dielectric ZrOXNY Grant US-6767795-B2 United States of America 27 Jul 2004