Blocking of silicon oxidation by low-dose nitrogen implantation

Overview of attention for article published in Applied Physics A: Materials Science & Processing, January 1988

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So far, Altmetric has seen 10 patents that reference this research output.

Power device having a polysilicon-filled trench with a tapered oxide thickness

Application US-10510863-B2

United States of America

Power device having a polysilicon-filled trench with a tapered oxide thickness

Grant US-9812548-B2

United States of America

Integrated circuit with differing gate oxide thickness

Grant US-6661061-B1

United States of America

Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial…

Grant US-6531364-B1

United States of America

Oxide formation technique using thin film silicon deposition

Grant US-6040207-A

United States of America

Dual gate oxide thickness integrated circuit and process for making same

Grant US-6033943-A

United States of America

Reduced bird's beak field oxidation process using nitrogen implanted into active region

Grant US-5962914-A

United States of America

Reduced bird's beak field oxidation process using nitrogen implanted into active region

Grant US-5937310-A

United States of America

Integrated circuit with differing gate oxide thickness and process for making same

Grant US-5882993-A

United States of America

Oxide formation technique using thin film silicon deposition

Grant US-5872376-A

United States of America