| Title |
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
|
|---|---|
| Published in |
Discover Nano, February 2015
|
| DOI | 10.1186/s11671-015-0815-5 |
| Pubmed ID | |
| Authors |
Sannian Song, Dongning Yao, Zhitang Song, Lina Gao, Zhonghua Zhang, Le Li, Lanlan Shen, Liangcai Wu, Bo Liu, Yan Cheng, Songlin Feng |
| Abstract |
Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)2 N]4, Sb [(CH3)2 N]3, Te(C4H9)2 as precursors and plasma-activated H2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials. |
Mendeley readers
The data shown below were compiled from readership statistics for 46 Mendeley readers of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| Korea, Republic of | 1 | 2% |
| Unknown | 45 | 98% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Researcher | 8 | 17% |
| Student > Master | 8 | 17% |
| Student > Ph. D. Student | 6 | 13% |
| Student > Doctoral Student | 3 | 7% |
| Professor | 3 | 7% |
| Other | 10 | 22% |
| Unknown | 8 | 17% |
| Readers by discipline | Count | As % |
|---|---|---|
| Materials Science | 18 | 39% |
| Engineering | 11 | 24% |
| Physics and Astronomy | 5 | 11% |
| Unspecified | 1 | 2% |
| Chemistry | 1 | 2% |
| Other | 1 | 2% |
| Unknown | 9 | 20% |