A METHOD OF DOPING WAFERS Application WO-2016107977-A1 World Intellectual Property Organisation (WIPO) 07 Jul 2016
Method for producing a semiconductor component and a semiconductor component produced… Grant US-RE44995-E1 United States of America 08 Jul 2014
Internal light trapping method and structure using porous monocyrstalline silicon films… Grant US-8153892-B2 United States of America 10 Apr 2012
Method and structure for hydrogenation of silicon substrates with shaped covers Grant US-8153887-B2 United States of America 10 Apr 2012
Method and structure for hydrogenation of porous monocrystalline silicon substrates Grant US-8148629-B2 United States of America 03 Apr 2012
Method and structure for hydrogenation of silicon substrates with shaped covers Grant US-8143514-B2 United States of America 27 Mar 2012
Method and apparatus for continuous formation and lift-off of porous silicon layers Grant US-6964732-B2 United States of America 15 Nov 2005
Micromechanical component with different doping types so that one type is anodized into… Grant US-6803637-B2 United States of America 12 Oct 2004
Method for the formation and lift-off of porous silicon layers Grant US-6649485-B2 United States of America 18 Nov 2003
SURFACE-MICROMACHINED ABSOLUTE PRESSURE SENSOR AND A METHOD FOR MANUFACTURING THEREOF Application WO-2002038491-A1 World Intellectual Property Organisation (WIPO) 16 May 2002
Process for the fabrication of crystalline semiconductor layers Application EP-0993029-A3 European Patent Office 29 Nov 2000
Process for the fabrication of crystalline semiconductor layers Application EP-0993029-A2 European Patent Office 12 Apr 2000