Method for adjusting the stress state of a piezoelectric film and acoustic wave device… Grant US-11462676-B2 United States of America 04 Oct 2022
Relaxation and transfer of strained layers Application EP-2151852-B1 European Patent Office 15 Jan 2020
Semiconductor structures, devices and engineered substrates including layers of… Application US-9368344-B2 United States of America 14 Jun 2016
Strain relaxation using metal materials and related structures Application US-9312339-B2 United States of America 12 Apr 2016
Stiffening layers for the relaxation of strained layers Application US-8912081-B2 United States of America 16 Dec 2014
Semiconductor structures, devices and engineered substrates including layers of… Application US-8836081-B2 United States of America 16 Sep 2014
Strain relaxation using metal materials and related structures Application US-8637383-B2 United States of America 28 Jan 2014
Methods for relaxation and transfer of strained layers and structures fabricated thereby Application US-8492244-B2 United States of America 23 Jul 2013
Semiconductor structures and devices including semiconductor material on a non-glassy… Grant US-8487295-B2 United States of America 16 Jul 2013
Methods of forming relaxed layers of semiconductor materials, semiconductor structures… Application US-8486771-B2 United States of America 16 Jul 2013
Methods of fabricating semiconductor structures and devices with strained semiconductor… Grant US-8461014-B2 United States of America 11 Jun 2013
Semiconductor layer structure and method for fabricating a semiconductor layer structure Grant US-8383495-B2 United States of America 26 Feb 2013
Methods of forming layers of semiconductor material having reduced lattice strain… Application US-8278193-B2 United States of America 02 Oct 2012
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Application US-8173512-B2 United States of America 08 May 2012
Methods of fabricating semiconductor structures and devices using glass bonding layers… Grant US-8114754-B2 United States of America 14 Feb 2012
A process for manufacturing a semiconductor device with a three-dimensional structure Grant DE-102006043360-B4 Germany 08 Dec 2011
Methods and structures for relaxation of strained layers Application US-8048693-B2 United States of America 01 Nov 2011
Methods for relaxation and transfer of strained layers and structures fabricated thereby Application US-7981767-B2 United States of America 19 Jul 2011
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Grant US-7919393-B2 United States of America 05 Apr 2011
Passivation of semiconductor structures having strained layers Grant US-7736935-B2 United States of America 15 Jun 2010
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Grant US-7736988-B2 United States of America 15 Jun 2010
Relaxation and transfer of strained layers Application EP-2151852-A1 European Patent Office 10 Feb 2010
Method for forming a relaxed or pseudo-relaxed useful layer on a substrate Grant US-7348260-B2 United States of America 25 Mar 2008
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Grant US-7018909-B2 United States of America 28 Mar 2006
Method of manufacture of a semiconductor structure Grant US-6773951-B2 United States of America 10 Aug 2004
Method of preparing a semiconductor using ion implantation in a SiC layer Grant US-6566158-B2 United States of America 20 May 2003