A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling

Overview of attention for article published in Journal of Computational Electronics, December 2014

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So far, Altmetric has seen 3 X posts from 3 X users, with an upper bound of 138,069 followers.

RT @mamidala90: A full-range dual material gate tunnel field effect transistor drain current model https://t.co/mRklykoTqE

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RT @mamidala90: A full-range dual material gate tunnel field effect transistor drain current model https://t.co/mRklykoTqE

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A full-range dual material gate tunnel field effect transistor drain current model https://t.co/mRklykoTqE

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