| Title |
High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition
|
|---|---|
| Published in |
Discover Nano, February 2013
|
| DOI | 10.1186/1556-276x-8-92 |
| Pubmed ID | |
| Authors |
Run-Chen Fang, Qing-Qing Sun, Peng Zhou, Wen Yang, Peng-Fei Wang, David Wei Zhang |
| Abstract |
We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible resistive switching behavior. After a 104-s retention time, the memory window of the device is still in accordance with excellent thermal stability, and a 10-year usage is still possible with the resistance ratio larger than 10 at room temperature and at 85°C. In addition, the operation speed of the device was estimated to be 500 ns for the reset operation and 800 ns for the set operation, which is fast enough for the usage of the memories in flexible circuits. Considering the excellent performance of the device fabricated by low-temperature atomic layer deposition, the process may promote the potential applications of oxide-based resistive random access memory in flexible integrated circuits. |
Mendeley readers
The data shown below were compiled from readership statistics for 89 Mendeley readers of this research output. Click here to see the associated Mendeley record.
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| Taiwan | 1 | 1% |
| Unknown | 88 | 99% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Student > Ph. D. Student | 29 | 33% |
| Researcher | 9 | 10% |
| Student > Master | 9 | 10% |
| Student > Bachelor | 5 | 6% |
| Student > Postgraduate | 3 | 3% |
| Other | 10 | 11% |
| Unknown | 24 | 27% |
| Readers by discipline | Count | As % |
|---|---|---|
| Engineering | 26 | 29% |
| Materials Science | 15 | 17% |
| Chemistry | 9 | 10% |
| Physics and Astronomy | 4 | 4% |
| Environmental Science | 3 | 3% |
| Other | 5 | 6% |
| Unknown | 27 | 30% |
Attention Score in Context
This research output has an Altmetric Attention Score of 1. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 19 February 2013.
All research outputs
#22,758,309
of 25,373,627 outputs
Outputs from Discover Nano
#798
of 1,146 outputs
Outputs of similar age
#181,055
of 204,716 outputs
Outputs of similar age from Discover Nano
#21
of 89 outputs
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So far Altmetric has tracked 1,146 research outputs from this source. They receive a mean Attention Score of 3.5. This one is in the 1st percentile – i.e., 1% of its peers scored the same or lower than it.
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We're also able to compare this research output to 89 others from the same source and published within six weeks on either side of this one. This one is in the 1st percentile – i.e., 1% of its contemporaries scored the same or lower than it.