Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Overview of attention for article published in Discover Nano, April 2016

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Above-average Attention Score compared to outputs of the same age (53rd percentile)
Good Attention Score compared to outputs of the same age and source (69th percentile)

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patent: 2 patents

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So far, Altmetric has seen 2 patents that reference this research output.

Topological material for trapping charge and switching a ferromagnet

Grant US-11328757-B2

United States of America

Vertical FET with symmetric junctions

Grant US-11094798-B2

United States of America