Title |
Effects of an intense, high-frequency laser field on bound states in Ga1 − xInxNyAs1 − y/GaAs double quantum well
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Published in |
Discover Nano, October 2012
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DOI | 10.1186/1556-276x-7-606 |
Pubmed ID | |
Authors |
Fatih Ungan, Unal Yesilgul, Serpil Şakiroğlu, Esin Kasapoglu, Ayse Erol, Mehmet Cetin Arikan, Huseyin Sarı, Ismail Sökmen |
Abstract |
Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization. |
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